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Weak Current Control Strong Current: How to use the Relay?
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Weak Current Control Strong Current: How to use the Relay?

Methods for measuring the temperature of semiconductor devices
2023-03-092023-03-09

Methods for measuring the temperature of semiconductor devices

Hall Effect: Definition, Principle, Measurement Methods
2023-03-092023-03-09

Hall Effect: Definition, Principle, Measurement Methods

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DDR3-1600 4GB (256MX16)1.25NS CL
DDR3-1600 4GB (256MX16)1.25NS CL

K4B4G1646E - BYK000 is a 4Gb DDR3L SDRAM memory chip by Samsung2. It has a data width of 16 - bit, a storage capacity of 512MB, and a data transfer rate of 1600Mbps2. With an operating voltage of 1.35V…

DDR3-1600 4GB (256MX16)1.25NS CL
DDR3-1600 4GB (256MX16)1.25NS CL

K4B4G1646E-BYK000 is a DDR3L SDRAM memory chip produced by Samsung. It has a capacity of 4Gb (512MB) with an organization of 256M x 16, a data transfer rate of 1600Mbps, an operating voltage of 1.35V, …

IC DRAM 8GBIT PARALLEL 78FBGA
IC DRAM 8GBIT PARALLEL 78FBGA

MT40A1G8SA-062E:R is a DDR4 SDRAM memory chip from Micron Technology. With an 8Gb capacity and 1G x 8 architecture, it runs at 1.6GHz clock frequency, delivering a data transfer rate of 3200Mbps. Opera…

IC DRAM 4GBIT PAR 96FBGA
IC DRAM 4GBIT PAR 96FBGA

MT41K256M16TW-107 V:P is a DDR3 SDRAM chip from Micron (Micron).It adopts a 96-TFBGA package (size approx. 8×14mm), suitable for surface mounting in compact devices. Industrial grade standard 0°C~95°…

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Quality assurance, Original authentic

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